Ion implantation into ZrNb nanometric multilayers

Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation

We report a tunable magnetoresistance (MR) behavior in suspended graphitic multilayers through point-defect engineering by ion implantation. We find that ion implantation drastically changes the MR behavior: the linear positive MR in pure graphitic multilayers transforms into a negative MR after introducing significant shortrange disorders (implanted boron or carbon atoms), consistent with rece...

Neon and Manganese Ion Implantation into AlInN

Simulation of BF3 Plasma Immersion Ion Implantation into Silicon

Plasma immersion ion implantation from a BF3 plasma into crystalline (100) silicon was performed using the PULSION plasma doping tool. Implanted boron profiles were measured with the SIMS method and simulated using models with different levels of sophistication. The physical implantation model is based on an analytical energy distribution for ions from the plasma and uses a Monte-Carlo simulati...

A study of ion implantation into crystalline germanium

We report an experimental and simulation study for introducing dopant ions into (100) germanium in the energy range from 5 to 40 keV. The successful calibration of our Monte Carlo ion implantation simulator for amorphous and crystalline Ge targets is demonstrated by comparison of predicted boron profiles with SIMS data. The implantation profile in Ge is shallower than in Si for a given energy d...

Ablation plasma ion implantation experiments: Measurement of Fe implantation into Si

Experiments have been performed demonstrating the feasibility of direct implantation of laser-ablated metal ions into a substrate. Initial experiments implanted iron ions into silicon substrates at pulsed, bias voltages up to negative 10 kV. Implantation of Fe ions into Si was confirmed by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The 7.6 nm depth of...